WAFER SPECIFICATION
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 Wafer Specification

Diameter
 1" (25,4 mm)  2" (50,8 mm)  3" (76,2 mm)
 4" (100 mm)  5" (125 mm)  6" (150 mm)

Any other specification upon request.

Type and doping
 n-type
  • P   - Phosphorus
  • Sb - Antimony
  • As - Arsenic doped
 p-type
  • B - Boron doped

Heavely doped phosophorus and boron wafers.

Orientation
(100) (110) (111)
Orientation tolerance
standard : +/- 0,5°
upon request : until +/- 0,05°
Off orientation
upon request (up to 40°)

Other orientations upon request [ex : (510)]

Resistivity
From 1 milliohmcm to 150 ohmcm

Thickness
standard for 1" 2" 3" 4" 5" 6"
(µm ) 250 275 380 525 625 675
tolerance +/- (µm ) 15 25 25 20 20 20

Any other specifications upon request.

Surface
As Cut Lapped Etched SSP DSP

Diameter *
1" 2" 3" 4" 5" 6"
Particle count
10-25 10-25 10-25 < 10 < 15 < 15
TTV Std (µm) *
10 10 10 10 10 10
TTV min (µm) *
3 3 3 3 3 3
Bow (µm)   *
< 30 < 30 < 30 < 40 < 40 < 40

* Any other specifications upon request

Roughness (Ra)
On polished surface : Less than 1 nm

Flatness
On polished surface : Less than 1 µm


Laser marking Upon request

SEMI STANDARDS All other specifications comply with SEMI STD (packaging, product identification, ...)

Quality control All our consignments are sent with a certificate of conformity.
 
 
 

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